Solution processed large area field effect transistors from dielectrophoreticly aligned arrays of carbon nanotubes

摘要

We demonstrate solution processable large area field effect transistors(FETs) from aligned arrays of carbon nanotubes (CNTs). Commercially available,surfactant free CNTs suspended in aqueous solution were aligned between sourceand drain electrodes using ac dielectrophoresis technique. After removing themetallic nanotubes using electrical breakdown, the devices displayed p-typebehavior with on-off ratios up to ~ 2X10^4. The measured field effectmobilities are as high as 123 cm2/Vs, which is three orders of magnitude higherthan typical solution processed organic FET devices.